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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION *High DC Current Gain: hFE= 25-100@IC= 7.5A *Excellent Safe Operating Area *Complement to Type MJ4502 APPLICATIONS *Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature Range VALUE 100 90 4 30 7.5 200 150 -65~200 UNIT V V V A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MJ802 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A ;IB=0 90 V VCE(sat) Collector-Emitter Saturation Voltage IC=7.5A; IB=0.75A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC=7.5A; IB=0.75A 1.3 V VBE(on) ICBO Base-Emitter On Voltage IC=7.5A ; VCE=2V VCB=100V; IE=0 VCB=100V; IE=0;TC=150 VEB=4V; IC=0 1.3 1.0 5.0 1.0 V Collector Cutoff Current mA IEBO Emitter Cutoff current mA hFE DC Current Gain IC=7.5A ; VCE=2V 25 100 fT Current-Gain--Bandwidth Product IC=1A;VCE=10V;f=1.0MHz 2.0 MHz isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 isc Websitewww.iscsemi.cn |
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